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Figure 1 from Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
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1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates: Applied Physics Letters: Vol 111, No 3
Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode - Physical Chemistry Chemical Physics (RSC Publishing)
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